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Significant improvement of flux pinning and irreversibility field in nano-Carbon doped MgB2 superconductor

机译:磁通量钉扎和不可逆场的显着改善   纳米碳掺杂mgB2超导体

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摘要

We report the synthesis and variation of superconductivity parameters such astransition temperature Tc, upper critical field Hc, critical current densityJc, irreversibility field Hirr and flux pinning parameter (Fp) for the MgB2-xCxsystem with nano-Carbon doping up to x=0.20. Carbon substitutes successfully onboron site and results in significant enhancement of Hirr and Jc(H).Resistivity measurements reveal a continuous decrease in Tc under zero appliedfield, while the same improves remarkably at higher fields with an increase innano-C content for MgB2-xCx system. The irreversibility field value (Hirr) is7.6 & 6.6 Tesla at 5 and 10K respectively for the pristine sample, which isenhanced to 13.4 and 11.0 Tesla for x = .08 sample at same temperatures.Compared to undoped sample, critical current density (Jc) for the x=0.08nano-Carbon doped sample is increased by a factor of 24 at 10K at 6 Teslafield.
机译:我们报告了MgB2-xCx系统的超导参数的合成和变化,如转变温度Tc,上临界场Hc,临界电流密度Jc,不可逆场Hirr和磁通钉扎参数(Fp),其中纳米碳掺杂高达x = 0.20。碳替代物成功地在硼位上产生并导致Hirr和Jc(H)的显着提高。电阻率测量显示零施加场下Tc连续降低,而MgB2-xCx系统中纳米C含量增加时,在更高的场下Tc显着提高。原始样品在5和10K时的不可逆场值(Hirr)分别为7.6和6.6 Tesla,对于x = .08样品,在相同温度下的不可逆场值分别提高到13.4和11.0 Tesla。与未掺杂样品相比,临界电流密度(Jc )对于x = 0.08的纳米碳掺杂样品,在6 Teslafield处在10K时增加了24倍。

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